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Springer Verlag, Microsystem Technologies, 5(16), p. 863-870

DOI: 10.1007/s00542-010-1035-7

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Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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