Published in
Springer (part of Springer Nature), Applied Physics A: Materials Science and Processing, 5(77), p. 669-671
DOI: 10.1007/s00339-002-1760-6
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Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors
Journal article published in 2003 by
R. M. Chu 
,
Y. D. Zheng,
Y. G. Zhou ,
S. L. Gu,
B. Shen,
R. Zhang,
R. L. Jiang,
P. Han,
Y. Shi
,
Y. D. Zheng,
Y. G. Zhou ,
S. L. Gu,
B. Shen,
R. Zhang,
R. L. Jiang,
P. Han,
Y. Shi
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