Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 1(63), p. 360-368, 2016
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HfO<sub>2</sub>-Based RRAM: Electrode Effects, Ti/HfO<sub>2</sub> Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
Journal article published in 2016 by
Boubacar Traore 
,
Philippe Blaise,
Elisa Vianello,
Luca Perniola,
Barbara De Salvo,
Yoshio Nishi
,
Philippe Blaise,
Elisa Vianello,
Luca Perniola,
Barbara De Salvo,
Yoshio Nishi
This paper was not found in any repository, but could be made available legally by the author.
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