Published in
American Institute of Physics, Applied Physics Letters, 10(104), p. 102104
DOI: 10.1063/1.4868411
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Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
,
J. Arbiol ,
J. Teubert,
S. Chatterjee,
J. Schörmann,
M. Eickhoff
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Abstract
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations above $10^{20}\,\text{cm}^{-3}$ shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration a degradation of the photoluminescence properties is not observed. ; Comment: Manuscript including Supplemental material (15 pages, 5 figures)