Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 1(33), p. 011208, 2015
DOI: 10.1116/1.4905497
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Control of InGaAs and InAs facets using metal modulation epitaxy
Journal article published in 2015 by
Mark A. Wistey 
,
Ashish K. Baraskar,
Uttam Singisetti,
Greg J. Burek,
Byungha Shin,
Eunji Kim,
Paul C. McIntyre,
Arthur C. Gossard,
Mark J. W. Rodwell
,
Ashish K. Baraskar,
Uttam Singisetti,
Greg J. Burek,
Byungha Shin,
Eunji Kim,
Paul C. McIntyre,
Arthur C. Gossard,
Mark J. W. Rodwell
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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