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IOP Publishing, Semiconductor Science and Technology, 10(27), p. 105023

DOI: 10.1088/0268-1242/27/10/105023

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Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Journal article published in 2012 by Nils A. K. Kaufmann, Amélie Dussaigne, Denis Martin, Pierre Valvin, Thierry Guillet ORCID, Bernard Gil, Francesco Ivaldi, Slawomir Kret, Nicolas Grandjean
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The effect of thermal annealing on In0.25Ga0.75N/GaN quantum wells grown by molecular beam epitaxy at 550°C is investigated. A strong increase in the 300 K photoluminescence (PL) intensity is observed for samples annealed at 880°C, while degradation occurs for higher temperatures. The improvement of the optical properties is ascribed to higher internal quantum efficiency (IQE), as indicated by temperature-dependent and time-resolved PL experiments. The effect of carrier localization due to possible quantum dot formation via indium clustering is ruled out based on high-resolution transmission electron microscopy imaging. IQE improvement is thus attributed to a reduction of point defects upon annealing.