Published in
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
DOI: 10.1109/wipda.2013.6695566
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Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive
Journal article published in 2013 by
Brian Hughes,
Rongming Chu 
,
James Lazar,
Stephen Hulsey,
Austin Garrido,
Daniel Zehnder,
Marcel Musni,
Karim Boutros,
Ieee
,
James Lazar,
Stephen Hulsey,
Austin Garrido,
Daniel Zehnder,
Marcel Musni,
Karim Boutros,
Ieee
This paper was not found in any repository, but could be made available legally by the author.
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