Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Device and Materials Reliability, 2(10), p. 287-294, 2010
DOI: 10.1109/tdmr.2010.2046739
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Analytical Modeling of Current Collapse in AlGaN/GaN HFETs According to the Virtual Gate Concept
Journal article published in 2010 by
Maziar Moradi 
,
Pouya Valizadeh
,
Pouya Valizadeh
This paper was not found in any repository, but could be made available legally by the author.
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