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2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)

DOI: 10.1109/sim.2000.939203

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A comparative study of the Ostwald ripening of As precipitates in LT-MBE grown and in As implanted GaAs

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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