Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 12(33), p. 1681-1683, 2012
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Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack
Journal article published in 2012 by
B. Benbakhti,
J. F. Zhang 
,
Z. Ji,
W. Zhang ,
J. Mitard,
B. Kaczer,
G. Groeseneken,
S. Hall,
J. Robertson,
P. Chalker
,
Z. Ji,
W. Zhang ,
J. Mitard,
B. Kaczer,
G. Groeseneken,
S. Hall,
J. Robertson,
P. Chalker
This paper was not found in any repository, but could be made available legally by the author.
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