Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 4(33), p. 525-527, 2012
Links
Tools
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $Ω⋅\hbox{mm}$
Journal article published in 2012 by
Jia Guo,
Guowang Li,
Faiza Faria,
Yu Cao,
Ronghua Wang,
Jai Verma,
Xiang Gao,
Shiping Guo,
Edward Beam,
Andrew Ketterson,
Michael Schuette,
Paul Saunier,
Mark Wistey 
,
Debdeep Jena,
Huili Xing
,
Debdeep Jena,
Huili Xing
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 