Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 5(32), p. 632-634, 2011
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1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Journal article published in 2011 by
Rongming Chu 
,
A. Corrion,
M. Chen,
Ray Li,
D. Wong,
D. Zehnder,
B. Hughes,
K. Boutros
,
A. Corrion,
M. Chen,
Ray Li,
D. Wong,
D. Zehnder,
B. Hughes,
K. Boutros
This paper was not found in any repository, but could be made available legally by the author.
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