Published in
Institute of Electrical and Electronics Engineers, IEEE Journal of Selected Topics in Quantum Electronics, 3(15), p. 743-748, 2009
DOI: 10.1109/jstqe.2008.2010235
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Temperature Characteristics of 1.3-$μ$m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
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