2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
DOI: 10.1109/irmmw-thz.2013.6665536
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Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels