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2012 4th IEEE International Memory Workshop

DOI: 10.1109/imw.2012.6213661

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Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM Capacitor for the DRAM Application

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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