Published in
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
DOI: 10.1109/iedm.2004.1419376
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Front-end-of-line (FEOL) optimization for high-performance, high-reliable strained-Si MOSFETs; from virtual substrate to gate oxidation
Proceedings article published in 2005 by
Sun-Ghil Lee Jong-Wook Lee
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