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American Institute of Physics, Applied Physics Letters, 4(106), p. 043505

DOI: 10.1063/1.4907261

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Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

Journal article published in 2015 by Huarui Sun ORCID, Miguel Montes Bajo, Michael J. Uren ORCID, Martin Kuball
This paper is available in a repository.
This paper is available in a repository.

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