Published in
American Institute of Physics, AIP Advances, 1(5), p. 017116
DOI: 10.1063/1.4905903
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Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
Journal article published in 2015 by
Meng-Fang Lin,
Xu Gao,
Nobuhiko Mitoma,
Takio Kizu 
,
Wei Ou-Yang ,
Shinya Aikawa ,
Toshihide Nabatame,
Kazuhito Tsukagoshi
,
Wei Ou-Yang ,
Shinya Aikawa ,
Toshihide Nabatame,
Kazuhito Tsukagoshi
This paper is made freely available by the publisher.
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