Published in
phys. stat. sol. (c), 7(2), p. 2598-2601
Links
Tools
MBE growth and device characteristics of InAlN/GaN HFETs
Journal article published in 2005 by
M. Higashiwaki 
,
T. Matsui
,
T. Matsui
This paper is made freely available by the publisher.
Full text: Download
Preprint: archiving forbidden
Published version:
archiving forbidden
Data provided by 