American Institute of Physics, Applied Physics Letters, 25(103), p. 252601
DOI: 10.1063/1.4851240
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We report on the transport properties of an array of N about 30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H which can be both consistently described by quantum tunneling of phase slips. ; Comment: accepted for publication on Appl. Phys. Lett