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American Institute of Physics, Applied Physics Letters, 5(107), p. 051904

DOI: 10.1063/1.4927826

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Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries

Journal article published in 2015 by Thomas Auzelle ORCID, Benedikt Haas ORCID, Martien Den Hertog, Jean-Luc Rouvière, Bruno Daudin, Bruno Gayral
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Using correlated experiments on single nanowires (NWs) by microphotoluminescence (μ-PL) and high resolution scanning transmission electron microscopy, we attribute the 3.45 eV luminescence of GaN NWs grown by plasma assisted molecular beam epitaxy (PA-MBE) to the presence of prismatic inversion domain boundaries (pIDBs). This attribution is further strengthened by a recent publication demonstrating the observation of pIDBs in PA-MBE grown GaN NWs. A statistical study of the presence of 3.45 eV lines in NWs PL spectra allows to estimate the ratio of single NWs nucleating with a pIDB to be 50% in the sample under scrutiny.