Published in
Elsevier, Thin Solid Films, 10(515), p. 4441-4444
DOI: 10.1016/j.tsf.2006.07.122
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1.31 μm GaAs-based heterojunction p–i–n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
Journal article published in 2007 by
W. K. Cheah,
W. J. Fan 
,
S. F. Yoon,
D. H. Zhang,
B. K. Ng,
W. K. Loke,
R. Liu,
A. T. S. Wee
,
S. F. Yoon,
D. H. Zhang,
B. K. Ng,
W. K. Loke,
R. Liu,
A. T. S. Wee
This paper was not found in any repository, but could be made available legally by the author.
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