Highly luminescent InxGa1-xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE)
Journal article published in 2009 by
T. L. Williamson,
M. A. Hoffbauer,
K. M. Yu 
,
L. A. Reichertz,
M. E. Hawkridge,
R. E. Jones,
N. Miller,
J. W. Ager ,
Z. Liliental-Weber,
W. Walukiewicz
,
L. A. Reichertz,
M. E. Hawkridge,
R. E. Jones,
N. Miller,
J. W. Ager ,
Z. Liliental-Weber,
W. Walukiewicz
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