Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer
Journal article published in 2009 by
Frank Lipskil,
Sarad B. Thapa,
Joachim Hertkorn,
Thomas Wunderer,
Stephan Schwaiger,
Ferdinand Scholz,
Martin Feneberg 
,
Michael Wiedenmann,
Klaus Thonke,
Holger Hochmuth,
Michael Lorenz,
Marius Grundmann
,
Michael Wiedenmann,
Klaus Thonke,
Holger Hochmuth,
Michael Lorenz,
Marius Grundmann
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