Published in
Elsevier, Journal of Crystal Growth, 1(196), p. 97-110
DOI: 10.1016/s0022-0248(98)00880-x
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Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy A transmission electron microscopy study
Journal article published in 1999 by
K. B. Joelsson,
L. Hultman,
W.-X. Ni,
J. Cardenas,
B. G. Svensson,
E. Olsson 
,
G. V. Hansson
,
G. V. Hansson
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