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Elsevier, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

DOI: 10.1016/j.nima.2015.08.027

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Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

Journal article published in 2015 by G.-F. Dalla Betta, G. Batignani, M. A. Benkechkache, S. Bettarini, G. Casarosa, D. Comotti, L. Fabris, F. Forti, M. Grassi, S. Latreche, L. Lodola, P. Malcovati ORCID, M. Manghisoni, R. Mendicino, F. Morsani and other authors.
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.