Published in
Elsevier, Microelectronic Engineering, (109), p. 342-345, 2013
DOI: 10.1016/j.mee.2013.03.084
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Multilevel resistive switching in ternary HfxAl1−xOy oxide with graded Al depth profile
Journal article published in 2013 by
A. Markeev 
,
A. Chouprik ,
K. Egorov,
Y.-U. Lebedinskii,
A. Zenkevich,
O. Orlov
,
A. Chouprik ,
K. Egorov,
Y.-U. Lebedinskii,
A. Zenkevich,
O. Orlov
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