7th Symposium on SiO(2), Advanced Dielectriece and Related Devices, St Etienne, FRANCE, JUN 30-JUL 02, 2008 ; International audience ; We developed a one-dimensional numerical simulation code for the calculation of the gate voltage-capacitance characteristic of MOS structures including the self-consistently solving of the Schrodinger and Poisson equations for different alternative channel materials with high mobility such as Ge, and non-conventional gate dielectrics such as HfO(2) and Al(2)O(3). Our simulation results are confronted to experimental data for various MOS structures with different semiconductors and dielectric stacks. (C) 2009 Elsevier B.V. All rights reserved.