Published in
Elsevier, Journal of Crystal Growth, (386), p. 168-174, 2014
DOI: 10.1016/j.jcrysgro.2013.10.013
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Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h
Journal article published in 2014 by
Brian M. McSkimming 
,
F. Wu,
Thomas Huault ,
Catherine Chaix,
James S. Speck
,
F. Wu,
Thomas Huault ,
Catherine Chaix,
James S. Speck
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