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Elsevier, Journal of Crystal Growth, 3-4(275), p. 440-447

DOI: 10.1016/j.jcrysgro.2004.12.020

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Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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