We report a magnetization study of stoichiometric ErN nanocrystalline films grown on Si and protected by a GaN passivating layer. According to the temperature dependence of the resistivity the films are heavily doped semiconductors. Above 100 K the magnetization data fit well to a Curie–Weiss behavior with a moment expected within the free-ion Er3+ multiplet. Below 50 K the Curie–Weiss plot steepens to an effective moment corresponding to that in the crystal-field determined quartet ground state, and develops a clear paramagnetic Curie–Weiss temperature of about 4.5 K. Zero-field- and field-cooled magnetization curves and the AC susceptibility firmly establish a ferromagnetic ground state within that multiplet below a Curie temperature of . Due to the (1 1 1) texture of the film the comparison between the magnetization behavior, when the field is applied parallel and perpendicular to the film plane, gives new information about the magnetic structure. An arrangement of the moments according to the model derived from neutron diffraction for bulk HoN is strongly suggested.