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Nature Research, Scientific Reports, 1(4), 2014

DOI: 10.1038/srep04371

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Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Journal article published in 2014 by L. Guo, X. Q. Wang, X. T. Zheng, X. L. Yang, F. J. Xu, N. Tang, L. W. Lu, W. K. Ge, B. Shen, L. H. Dmowski, T. Suski ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.