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American Institute of Physics, Applied Physics Letters, 19(92), p. 192503

DOI: 10.1063/1.2927482

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Temperature dependence of the interface moments in Co2MnSi thin films

This paper is available in a repository.
This paper is available in a repository.

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Abstract

X-ray magnetic circular dichroism (XMCD) is utilized to explore the temperature dependence of the interface moments in Co{sub 2}MnSi (CMS) thin films capped with aluminium. By increasing the thickness of the capping layer we demonstrate enhanced interface sensitivity of the measurements and the existence of a thin Mn oxide layer at the CMS/Al interface even when a thick capping layer is used. We show that for well ordered L2{sub 1} CMS films there is no significant variation in either the Co or Mn interface moments as a function of temperature. However, a dramatic reduction in the interface moments at low temperature is observed in a disordered CMS film that is likely to be caused by increased Mn-Mn antiferromagnetic coupling. It is suggested that for ordered L2{sub 1} CMS films the temperature dependence of the tunneling magnetoresistance is not related to changes in the interface moments. However, the existence of residual Mn oxide at the CMS/barrier interface could be a contributing factor.