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Elsevier, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1-4(116), p. 77-84

DOI: 10.1016/0168-583x(96)00014-6

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Optical doping of materials by erbium ion implantation

Journal article published in 1996 by F. Priolo, G. N. vandenHoven, G. Franzó, S. Coffa, A. Polman, E. Snoeks, G. N. van den Hoven, S. Libertino ORCID, S. Lombardo, S. U. Campisano, A. Carnera
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The development of silicon compatible optoelectronics would require the fabrication and integration of several optical functions such as waveguides, amplifiers, signal processing components and light emitters in silicon or on thin films deposited on silicon, In this paper the optical doping by erbium ion implantation of sodalime silica glass and silicon is presented with the aim to fabricate an amplifier and a light source operating at 1.5 mu m. The materials issues currently limiting the performances of these devices are analyzed in detail and the possible future developments are discussed.