Published in

International Union of Crystallography, Journal of Applied Crystallography, 3(48), p. 702-710, 2015

DOI: 10.1107/s1600576715009954

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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup

Journal article published in 2015 by Yan Ping Wang, Antoine Letoublon, Tra Nguyen Thanh, Mounib Bahri, Ludovic Largeau, Gilles Patriarche, Charles Cornet ORCID, Nicolas Bertru, Alain Le Corre, Olivier Durand
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

This study is carried out in the context of III–V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm.