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Materials Research Society, Materials Research Society Symposium Proceedings, (865), 2005

DOI: 10.1557/proc-865-f14.23

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Solar Cells prepared with Spray-ILGAR Indium Sulfide buffer layers on Cu(In,Ga)Se2 Absorbers

Journal article published in 2005 by Nicholas A. Allsop, Christian A. Kaufmann, Axel Neisser, Marin Rusu ORCID, Andreas Hänsel, Martha C. Lux-Steiner, Christian-H. Fischer
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

AbstractIndium sulfide buffer layers deposited by the Spray-Ion Layer Gas Reaction (Spray-ILGAR) technique have recently been used with Cu(In,Ga)(S,Se)2 absorbers giving cells with an efficiency equal to the cadmium sulfide references. In this paper we show the first results from cells prepared with Cu(In,Ga)Se2 absorbers (sulfur free). These cells reach an efficiency of 13.1% which remains slightly below the efficiency of the cadmium sulfide reference. However, temperature dependant current-voltage measurements reveal that the activation energy of the dominant recombination mechanism remains unchanged from the cadmium sulfide buffered cells indicating that recombination remains within the space charge region.