AbstractAn all‐alkoxide route to SrBi₂Ta₂O₉ (SBT) thin films and powders was developed. While stoichiometric gels transformed to single‐phase SBT, excess bismuth was required to obtain single‐phase SBT films on Pt substrates. An annealing temperature of 800 °C in O₂ for 2 minutes was required to crystallize the films. Electrical measurements of SBT films produced under these conditions showed that films less than 2000 Å in thickness were shorted, while films of 3000 to 5000 Λ had a dielectric constant of~ 300. RBS measurements of a bismuth titanate film on Pt indicated that Pt diffuses into the dielectric layer when annealed at 700 °C in O₂ for 1 minute, suggesting that interfacial reaction of these layered bismuth materials may be significant.