Dissemin is shutting down on January 1st, 2025

Published in

Cambridge University Press (CUP), MRS Online Proceedings Library, (1396)

DOI: 10.1557/opl.2012.86

Links

Tools

Export citation

Search in Google Scholar

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Journal article published in 2012 by Stefan Schöche, Tino Hofmann, Nebiha Ben Sedrine, Vanya Darakchieva, Xinqiang Wang, Akihiko Yoshikawa, Mathias Schubert ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

ABSTRACTWe apply infrared spectroscopic ellipsometry (IRSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1x1018 cm-3 and 3x1019 cm-3. The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.