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Springer, Journal of Materials Research, 5(22), p. 1230-1234, 2007

DOI: 10.1557/jmr.2007.0146

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Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

Journal article published in 2007 by L. V. Saraf, M. H. Engelhard, C. M. Wang, A. S. Lea ORCID, D. E. McCready, V. Shutthanandan, D. R. Baer, S. A. Chambers
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD)2] is a relatively uninvestigated precursor that was used in this work to grow highly c-axis-oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicated that surface carbon on several samples was reduced from as much as 34 at.% to much less than 1 at.% within the first 5 nm, indicating very clean Zn(TMHD)2 precursor decomposition. Microstructural and compositional analysis revealed columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atomic percent ratio indicative of stoichometric ZnO.