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Trans Tech Publications, Materials Science Forum, (778-780), p. 471-474, 2014

DOI: 10.4028/www.scientific.net/msf.778-780.471

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High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28Si12C, Natural and 13C–Enriched 4H-SiC

Journal article published in 2014 by Ivan G. Ivanov, Milan Yazdanfar, Bjorn Lundqvist, Jr Tai Chen, Jawad ul Hassan, Jawad Ul Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. Ager ORCID, Olle Kordina, Erik Janzén
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The optical properties of isotope-pure28Si12C, natural SiC and enriched with13C isotope samples of the 4H polytype are studied by means of Raman and photoluminescence spectroscopies. The phonon energies of the Raman active phonons at the Γ point and the phonons at the M point of the Brillouin zone are experimentally determined. The excitonic bandgaps of the samples are accurately derived using tunable laser excitation and the phonon energies obtained from the photoluminescence spectra. Qualitative comparison with previously reported results on isotope-manipulated Si is presented.