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Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

Journal article published in 2013 by S. Roy, A. M. Kamerbeek, K. G. Rana, S. Parui, T. Banerjee ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface. (C) 2013 AIP Publishing LLC.