Published in
Institute of Electrical and Electronics Engineers, IEEE Journal of Selected Topics in Quantum Electronics, 6(4), p. 964-969, 1998
DOI: 10.1109/2944.736085
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The effects of composition and doping on the response of GeC-Si photodiodes
Journal article published in 1998 by
J. Kolodzey,
O. Gauthier-Lafaye,
S. Sauvage 
,
J.-L. Perrossier,
P. Boucaud,
F. H. Julien,
J.-M. Lourtioz,
Fen Chen,
B. A. Orner,
K. Roe,
C. Guedj,
R. G. Wilson,
J. Spear
,
J.-L. Perrossier,
P. Boucaud,
F. H. Julien,
J.-M. Lourtioz,
Fen Chen,
B. A. Orner,
K. Roe,
C. Guedj,
R. G. Wilson,
J. Spear
This paper is available in a repository.
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