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Materials Research Society, Materials Research Society Symposium Proceedings, (830), 2004

DOI: 10.1557/proc-830-d6.6

American Institute of Physics, Journal of Applied Physics, 4(99), p. 044302

DOI: 10.1063/1.2171785

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Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

Journal article published in 2004 by D. Tsoukalas, Jm Slaughter, M. Tencé, H. Coffin, C. Bonafos, S. Schamm ORCID, N. Cherkashin ORCID, G. Ben Assayag, M. Respaud, A. Claverie, P. Dimitrakis, C. Colliex, P. Normand, Tj King
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Abstract

ABSTRACTThe effect of annealing in diluted oxygen on the structural characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by ultra-low energy ion implantation (1 keV) is reported. The nanocrystal characteristics (size, density, coverage) have been measured by spatially resolved Electron Energy Loss Spectroscopy using the spectrum-imaging mode of a Scanning Transmission Electron Microscope. Their evolution has been studied as a function of the annealing duration under N2+O2 at 900°C. An extended spherical Deal-Grove model for the self-limiting oxidation of embedded silicon nanocrystals has been carried out. It shows that stress effects, due to the deformation of the oxide, slows down the chemical oxidation rate and leads to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results.