Published in

Materials Research Society, Materials Research Society Symposium Proceedings, (825), 2004

DOI: 10.1557/proc-825-g5.3

Links

Tools

Export citation

Search in Google Scholar

Magnetic Properties of GaN Layers Implanted by Mn, Cr or V.

Journal article published in 2004 by Vitaliy A. Guzenko, Nicolas Thillosen, Andre Dahmen, Raffaella Calarco, Thomas Schäpers, Martina Luysberg ORCID, Lothar Houben ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Red circle
Preprint: archiving forbidden
Green circle
Postprint: archiving allowed
Upload
Green circle
Published version: archiving allowed
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

AbstractWe report on magnetic properties of the GaN layers implanted with 3d transition metal ions. GaN layers grown by MOVPE on sapphire substrates, p- or n-doped, were implanted by Mn, Cr or V ions with a dose of 5×1016 cm−2 and implantation energy of 200 keV. Subsequently, a rapid thermal annealing in nitrogen atmosphere for 5 minutes at different temperatures (700°C – 1050°C) was performed. The magnetization as a function of magnetic field as well as the dependence on temperature revealed paramagnetic behavior for all samples. In addition, an antiferromagnetic coupling between implanted ions was found.