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Materials Research Society, Materials Research Society Symposium Proceedings, (798), 2003

DOI: 10.1557/proc-798-y6.1

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Polarization-dependent spectroscopy of the near-bandgap excitonic emission in free standing GaN

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

ABSTRACTWe report a comparative study of the exciton emission in free standing HVPE layer for all polarization configurations. A noticeable difference between the emission spectra polarized perpendicular and parallel to the c-axis of the crystal is observed. The spectra for E┴c and EIIc are found to be dominated by the emissions of the donor-bound exciton and exciton-polariton both arising from the A and B valence band, respectively, which clearly reveals the optical selection rules in wurtzite GaN. The temperature evolution of the emission spectra is also examined and the thermal redistribution of the excitons at different polarization is discussed.