Published in
Materials Research Society, Materials Research Society Symposium Proceedings, (743), 2002
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Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE
Journal article published in 2002 by
A. M. Sanchez,
P. Ruterana,
P. Vennegues,
F. Semond,
F. J. Pacheco,
S. I. Molina 
,
R. Garcia,
M. A. Sanchez-Garcia,
E. Calleja
,
R. Garcia,
M. A. Sanchez-Garcia,
E. Calleja
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Abstract
ABSTRACTIn this work it is shown that thin AlN buffer layers cause N-polarity GaN epilayers, with a high inversion domains density. When the AlN thickness increases, the polarity of the epilayer changes to Ga. The use of a low temperature AlN nucleation layer leads to a flat AlN/Si(111) interface. This contributes to decrease the inversion domains density in the overgrown GaN epilayer with a Ga polarity.