Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 5(36), p. 448-450, 2015
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GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN<sub>x</sub> as Gate Dielectric
Journal article published in 2015 by
Mengyuan Hua 
,
Cheng Liu,
Shu Yang ,
Shenghou Liu,
Kai Fu,
Zhihua Dong,
Yong Cai,
Baoshun Zhang,
Kevin J. Chen
,
Cheng Liu,
Shu Yang ,
Shenghou Liu,
Kai Fu,
Zhihua Dong,
Yong Cai,
Baoshun Zhang,
Kevin J. Chen
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