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Published in

Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 3(36), p. 232-234, 2015

DOI: 10.1109/led.2015.2395454

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Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

Journal article published in 2015 by Finella Lee, Liang-Yu Su, Chih-Hao Wang, Yuh-Renn Wu ORCID, Jianjang Huang
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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