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Institute of Electrical and Electronics Engineers, IEEE Journal of Selected Topics in Quantum Electronics, 3(21), p. 17-22, 2015

DOI: 10.1109/jstqe.2014.2361790

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InGaAs/InP Single-Photon Detector Gated at 1.3 GHz With 1.5% Afterpulsing

Journal article published in 2015 by Carmelo Scarcella, Gianluca Boso, Alessandro Ruggeri ORCID, Alberto Tosi
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We demonstrate a single-photon detector based on InGaAs/InP single-photon avalanche diodes (SPADs) sinusoidalgated at 1.3 GHz with very low afterpulsing (about 1.5%), high dynamic range (maximum count rate is 650 Mcount/s), high photon detection efficiency (>30% at 1550 nm), low noise (per-gate dark count rate is 2.2 x 10(-5)), and low timing jitter (