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Published in

Materials Research Society, Materials Research Society Symposium Proceedings, (956), 2006

DOI: 10.1557/proc-0956-j03-02

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Electrical Transport in Heavily B-Doped Epitaxial Diamond and NCD

Journal article published in 2006 by Milos Nesladek, Phillipe Bergonzo ORCID, Jiri Mares, Pavel Hubik
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

ABSTRACTThis paper deals with a LT transport study in B-doped diamond. To understand the electrical transport in heavily B-doped diamond and the influence of disorder onto the electrical transport, we have prepared nanocrystalline and epitaxial B-doped diamond films at CEA Saclay. The transport properties of these layers have been studied at the Institute of Physics Czech Academy of Sciences in Prague. It has been found that our B-doped nanocrystalline diamond exhibits also the SC transition, similarly as the original Russian work done on HPHT polycrystals or single crystal diamond. Additionally, the properties of (111) epitaxial films are discussed.